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32Mb Ultra Low Power Mobile SDRAMs

Ideal for Power Sensitive Applications
(updated March 2010)

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1 Gb High Speed DDR2 SDRAM

Up to 533MHz clock speed
(updated March 2010)

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The 512Mb High Speed DDR2 SDRAM

Now sampling: 512Mbit with up to 400MHz clock speed (updated March 2010)

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The New Ultra-Low Power 1Mb SRAM

ISSI’s latest 1Mb Ultra-Low Power SRAM is currently sampling. The new product offers significant power savings compared to the previous versions and features the lowest operating current in the industry.

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ISSI 105C Extended Temperature SDRAM

ISSI created the industry’s most complete line of automotive SDRAMs by expanding temperature range support to include -40C to +105C devices.

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Previously Featured Products
产品手册
- May 2010

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ISSI at Jefferies
4th Annual Global Technology Conference

March 8, 2010 (Mon.)
2:00PM


ISSI at Embedded World Exhibition

March 2-4, 2010
Stand: Hall 12 Stand 474

Live Webcast

Q1 2010 ISSI Earnings Conference Call
Jan. 28, 2010 (Thurs)
1:30pm PM

 

 

ISSI on EBV TV

 

ISSI Automotive on EBV TV


ISSI Announces Acquisition of Enable Semiconductor


 

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Integrated Silicon Solution, Inc.
1940 Zanker Road, San Jose, CA 95112-4216
Tel: (408) 969-6600 Fax: (408) 969-7800		 Webmaster
© 2008 ISSI. All Rights Reserved.
Last Updated: 06/03/2008
An ISO 9001, 14001 Company		 Disclosure
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