DDR4 SDRAM - Integrated Silicon Solution Inc.
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DDR4 SDRAM

  • Bidirectional differential data strobe
  • Data masking per byte on Write commands
  • Per DRAM Programmability
  • Data Bus Inversion (DBI)
  • Write Cycle Redundancy Check (CRC)
  • Dynamic ODT
  • Fine Granularity Refresh Mode
  • Long-Term Support

Notes:

  • Simulation Models not listed above may be available upon request
  • S = Sample, Prod = Production
  • NR = Not Recommended for new designs
  • EOL = End of Life
  • IF YOU DON'T SEE A PRODUCT YOU ARE INTERESTED IN AND HAVE A SPECIAL REQUEST, CONTACT US AND LET US KNOW
  • Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
  • a. the risk of injury or damage has been minimized;
  • b. the user assume all such risks; and
  • c. potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances