DDR4 SDRAM
- Bidirectional differential data strobe
- Data masking per byte on Write commands
- Per DRAM Programmability
- Data Bus Inversion (DBI)
- Write Cycle Redundancy Check (CRC)
- Dynamic ODT
- Fine Granularity Refresh Mode
- Long-Term Support
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DDR4 SDRAM
| Den | Org | Type | Part Number | Buy | Vcc | Refsh | Speed | Pkg(Pins) | Status | Models | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 4G | 512Mx8 | DDR4 | IS43QR85120B | 1.2V | 8K | 2666,2400 | BGA(78) | Prod | IBIS | ||
| 256Mx16 | DDR4 | IS43QR16256B | 1.2V | 8K | 2666,2400 | BGA(96) | Prod | IBIS | |||
| 8G | 1Gx8 | DDR4 | IS43QR81024A | 1.2V | 8K | 2666,2400 | BGA(78) | Prod | IBIS | ||
| 512Mx16 | DDR4 | IS43QR16512A | 1.2V | 8K | 2666,2400 | BGA(96) | Prod | IBIS | |||
| 16G | 2Gx8 | DDR4 | IS43QR8K02S2A | 1.2V | 8K | 2400 | BGA(78) | Prod | IBIS | Dual Rank |
DDR4 SDRAM Automotive
| Den | Org | Type | Part Number | Buy | Vcc | Refsh | Speed | Pkg(Pins) | Status | Models | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 4G | 512Mx8 | DDR4 | IS46QR85120B | 1.2V | 8K | 2666,2400 | BGA(78) | Prod | IBIS | ||
| 256Mx16 | DDR4 | IS46QR16256B | 1.2V | 8K | 2666,2400 | BGA(96) | Prod | IBIS | |||
| 8G | 1Gx8 | DDR4 | IS46QR81024A | 1.2V | 8K | 2666,2400 | BGA(78) | Prod | IBIS | ||
| 512Mx16 | DDR4 | IS46QR16512A | 1.2V | 8K | 2666,2400 | BGA(96) | Prod | IBIS | |||
| 16G | 2Gx8 | DDR4 | IS46QR8K02S2A | 1.2V | 8K | 2400 | BGA(78) | Prod | IBIS | Dual Rank |
DRAM Application Notes
| App Note | Description | Comment |
|---|---|---|
| AN43QR001 | DDR4 SDRAM Layout Guide | Contact ISSI |
Notes:
- Simulation Models not listed above may be available upon request
- S = Sample, Prod = Production
- NR = Not Recommended for new designs
- EOL = End of Life
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